All articles tagged with #twistronics
Physicists from MIT have successfully transformed ordinary graphite into a new material called pentalayer rhombohedral stacked graphene, which possesses three unique properties never seen before in natural graphite. By stacking and twisting different layers of graphene, scientists have discovered the creation of new properties, such as superconductivity and magnetism, in a field of research known as "twistronics."
MIT researchers have discovered a new method to create atomically thin versions of quasicrystals using twistronics, a technique involving rotating layers of materials. By layering three sheets of graphene and twisting two of them at different angles, the researchers created a moiré quasicrystal, an unusual class of material with unique patterns. They found that this quasicrystal exhibited superconductivity and symmetry breaking, providing insights into the behavior of electrons and the potential for more efficient electronic devices. The research opens up new possibilities for studying quasicrystals and exploring exotic phenomena in the field of twistronics.
Researchers are exploring the potential of twistronics, a field in condensed matter physics, by manipulating the properties of 2D materials like graphene through subtle changes in the twist angle between stacked layers. A new fabrication technique using long ribbons of graphene allows for better control over the twist angle and strain, leading to more predictable and reproducible devices. This technique opens up possibilities for studying the fundamental properties of twisted layers of graphene and other 2D materials, and may help uncover the origins of phenomena like superconductivity at specific twist angles.
Researchers have introduced the twist to control the spin degree of freedom, using CrI3, an interlayer-antiferromagnetic-coupled vdW material, as their medium. The result of stacked antiferromagnets twisting onto itself was made possible by having fabricated samples with different twisting angles. The observed voltage-assisted magnetic switching and magnetoelectric effect may lead to promising memory and spin-logic devices. This research suggests a new class of material platform for spintronics and magnetoelectronics, opening the opportunity to pursue new physics as well as spintronic applications.