Residue-Free Field Effect Transistors: Pioneering Beyond-Silicon Technology
Originally Published 2 years ago — by Phys.org
Researchers from the Institute for Basic Science in South Korea have made a breakthrough in the fabrication of field-effect transistors (FET) by successfully using polypropylene carbonate (PPC) for residue-free wet transfer. This method allows for the production of wafer-scale two-dimensional transition metal dichalcogenides (TMDs) without the introduction of residues or wrinkles. The FET device built using this technique exhibited high electrical performance, surpassing previously reported values. The researchers believe that this technology can be easily implemented using existing integrated circuit manufacturing processes, opening up possibilities for beyond-silicon-based semiconductor technologies.