"Breakthrough: Robust and Ultra-Sensitive Topological Quantum Device Developed by Quantum Physicists"
Quantum physicists from Dresden and Würzburg have developed a semiconductor device made of aluminum-gallium-arsenide that exhibits exceptional robustness and sensitivity due to a topological skin effect, shielding it from external perturbations and enabling unprecedented precision measurements. This breakthrough paves the way for high-precision quantum modules in topological physics and holds potential for applications in the semiconductor industry. The device, measuring about 0.1 millimeters in diameter, demonstrates the topological skin effect at a microscopic scale in a natural semiconductor material for the first time, making it highly suitable for sensor engineering and amplifiers with minuscule diameters.
