Tag

Phase Change Memory

All articles tagged with #phase change memory

technology1 year ago

Revolutionary Semiconductor Promises Ultra-Low Power Universal Memory

Researchers have discovered a method to significantly reduce the energy requirements of phase-change memory (PCM) using indium selenide, a semiconductor with unique properties. This breakthrough could lead to the development of low-power memory devices, overcoming a major barrier to the widespread adoption of PCM, which combines the benefits of both RAM and storage devices. The discovery was made by accident when a continuous current caused unexpected amorphization in the material, potentially paving the way for new low-energy electronic applications.

technology2 years ago

Residue-Free Field Effect Transistors: Pioneering Next-Generation Memory Technology

Researchers at Tohoku University have made advancements in phase change memory by using sputtering to create niobium telluride (NbTe4), a material with superior storage and thermal capabilities. NbTe4 exhibits an ultra-low melting point and high crystallization temperature, offering reduced reset energies and improved thermal stability. It demonstrated a significant reduction in operation energy and fast-switching speed, positioning it as a promising next-generation phase change memory material.

technology2 years ago

"Breakthrough Material Paves the Way for Cutting-Edge Memory Tech"

Researchers from Tohoku University have discovered a promising material, niobium telluride (NbTe4), for next-generation phase change memory. Using sputtering, they fabricated large-area 2D vdW tetra-chalcogenides and found that NbTe4 exhibits an ultra-low melting point and high crystallization temperature, offering reduced reset energies and improved thermal stability. NbTe4 demonstrated a significant reduction in operation energy, a high data retention temperature, and fast-switching speed, positioning it as an ideal material for addressing current challenges in phase change memory technology.