"Breakthrough Material Paves the Way for Cutting-Edge Memory Tech"
Researchers from Tohoku University have discovered a promising material, niobium telluride (NbTe4), for next-generation phase change memory. Using sputtering, they fabricated large-area 2D vdW tetra-chalcogenides and found that NbTe4 exhibits an ultra-low melting point and high crystallization temperature, offering reduced reset energies and improved thermal stability. NbTe4 demonstrated a significant reduction in operation energy, a high data retention temperature, and fast-switching speed, positioning it as an ideal material for addressing current challenges in phase change memory technology.