Residue-Free Field Effect Transistors: Pioneering Next-Generation Memory Technology

Researchers at Tohoku University have made advancements in phase change memory by using sputtering to create niobium telluride (NbTe4), a material with superior storage and thermal capabilities. NbTe4 exhibits an ultra-low melting point and high crystallization temperature, offering reduced reset energies and improved thermal stability. It demonstrated a significant reduction in operation energy and fast-switching speed, positioning it as a promising next-generation phase change memory material.