All articles tagged with #lpddr5x
Apple's upcoming iPhone 18 is expected to feature 12GB of RAM, similar to the iPhone 17 Pro, marking a significant upgrade for the base model, driven by increased demand for higher memory capacity and potential AI capabilities. The release is staggered, with the base iPhone 18 launching in spring 2026, and Apple sourcing more LPDDR5X DRAM chips from Samsung, Micron, and SK Hynix to support this upgrade.
Samsung is increasingly sourcing memory chips from Micron due to lower yields in its own semiconductor division, with Micron expected to supply a larger share for the Galaxy S25 and S26 series, potentially including a worldwide 16GB RAM option for the Galaxy S26.
Samsung has completed the validation of its 10.7Gbps LPDDR5X DRAM for use with MediaTek's upcoming Dimensity 9400 SoC, offering over 25% improvement in power consumption and performance. This collaboration aims to enhance battery life and on-device AI features for mobile devices, solidifying Samsung's leadership in low-power, high-performance DRAM technology.
Samsung has developed the industry's fastest LPDDR5X DRAM, offering 10.7Gbps performance, 30% more capacity, and 25% higher power efficiency. This innovation is optimized for AI applications and is expected to expand into various sectors including PCs, accelerators, servers, and automobiles. The LPDDR5X is designed to meet the increasing demand for low-power, high-performance memory in the on-device AI era, with mass production scheduled to begin in the second half of the year.
Micron has launched the LPCAMM2, a high-performance low-power memory solution that improves performance, power efficiency, and space consumption compared to traditional SODIMMs. Integrated with LPDDR5X DRAM, it offers faster peak bandwidth for AI inference at the edge and outperforms SODIMMs in various workloads. The company is collaborating with industry leaders like Lenovo, Compal, and Intel to deploy the chip for real-life use cases, signaling a move back to profitability. Additionally, the expectation of supply normalization and the boom in AI spending are expected to drive demand for its memory chips.
Samsung unveiled its HBM3E memory called Shinebolt, offering improved memory bandwidth and speed for high-end processors and GPUs. The company also provided updates on the development of its GDDR7 VRAM, LPDDR5X CAMM memory, and Detachable AutoSSD. Samsung's HBM3E memory is faster than similar chips from Micron and SK Hynix, with data transfer speeds of 9.8Gbps per pin and capacities of up to 36GB. The company is also working on HBM4 memory using advanced chip manufacturing and packaging technologies. Additionally, Samsung announced the development of GDDR7 memory with lower power consumption, a petabyte-scale SSD, and detachable LPDDR5X DRAM for laptops and PCs. For automotive use, Samsung introduced Detachable AutoSSD with high data transfer speeds and storage capacity.
Samsung has unveiled its next-generation memory technologies, including HBM3E "Shinebolt" for AI and data centers, GDDR7 for gaming graphics, and LPDDR5x CAMM2 for slimming down mobile designs. The HBM3E offers impressive speeds of 9.8 Gbps per pin, while GDDR7 provides a 40% performance boost and 20% power efficiency improvement compared to GDDR6. The LPDDR5x CAMM2 is expected to be a game changer in the PC and laptop DRAM market. Samsung aims to offer a custom turnkey service combining advanced packaging technologies and foundry offerings.