Samsung Unveils Next-Gen Shinebolt Memory Innovations for Hyperscale AI Era

Samsung unveiled its HBM3E memory called Shinebolt, offering improved memory bandwidth and speed for high-end processors and GPUs. The company also provided updates on the development of its GDDR7 VRAM, LPDDR5X CAMM memory, and Detachable AutoSSD. Samsung's HBM3E memory is faster than similar chips from Micron and SK Hynix, with data transfer speeds of 9.8Gbps per pin and capacities of up to 36GB. The company is also working on HBM4 memory using advanced chip manufacturing and packaging technologies. Additionally, Samsung announced the development of GDDR7 memory with lower power consumption, a petabyte-scale SSD, and detachable LPDDR5X DRAM for laptops and PCs. For automotive use, Samsung introduced Detachable AutoSSD with high data transfer speeds and storage capacity.