Samsung Unveils Next-Gen Memory Innovations for Hyperscale AI Era

Samsung has unveiled its next-generation memory technologies, including HBM3E "Shinebolt" for AI and data centers, GDDR7 for gaming graphics, and LPDDR5x CAMM2 for slimming down mobile designs. The HBM3E offers impressive speeds of 9.8 Gbps per pin, while GDDR7 provides a 40% performance boost and 20% power efficiency improvement compared to GDDR6. The LPDDR5x CAMM2 is expected to be a game changer in the PC and laptop DRAM market. Samsung aims to offer a custom turnkey service combining advanced packaging technologies and foundry offerings.