Revolutionary Graphene Stacking Unlocks Quantum Potential

Researchers at NYU Tandon School of Engineering have discovered a new method for creating self-organized ABA and ABC stacking domains in three-layer epitaxial graphene, eliminating the need for complex manual alignment. This breakthrough, achieved by observing natural growth-induced stacking on silicon carbide, could significantly advance quantum technologies by enabling scalable production of graphene-based devices with unique quantum properties like superconductivity and unconventional quantum Hall effects.