"Breakthrough Graphene Semiconductor Paves Way for Ultra-Fast Computing"

Recent studies have highlighted advancements in the growth and properties of epitaxial graphene on silicon carbide (SiC), which show promise for high-mobility semiconducting applications. The research encompasses the development of graphene with ultrahigh electron mobility, which is crucial for transistor electronics. Techniques such as confinement controlled sublimation and hydrogen intercalation have been employed to produce large area and structured epitaxial graphene, with a focus on understanding and improving the interface structure between graphene and SiC. These advancements could lead to significant improvements in graphene-based nanoelectronics, offering a route to overcome the limitations of low electron mobility typically associated with two-dimensional semiconductors.