All articles tagged with #memory devices
Researchers at KAIST and collaborators have experimentally confirmed the three-dimensional vortex-shaped polarization distribution inside ferroelectric nanoparticles using atomic electron tomography. This breakthrough, which validates 20-year-old theoretical predictions, could lead to the development of ultra-high-density memory devices capable of storing significantly more data than current technologies.
Researchers have developed a new reconfigurable field-effect transistor (FET) and memory device based on a 2D heterostructure. The transistor, which can be modulated via a photo-induced trapping mechanism, combines the characteristics of unipolar n- and p-type semiconductors. It can switch between a transistor and memory mode, and multiple FETs can be used to create logic circuits. The device's unique design could enhance the performance of computing and memory devices, and it also shows potential for neuromorphic computing applications.