Revolutionary 2D Heterostructure Transistor Unleashes Energy-Efficient AI Power
Researchers have developed a new reconfigurable field-effect transistor (FET) and memory device based on a 2D heterostructure. The transistor, which can be modulated via a photo-induced trapping mechanism, combines the characteristics of unipolar n- and p-type semiconductors. It can switch between a transistor and memory mode, and multiple FETs can be used to create logic circuits. The device's unique design could enhance the performance of computing and memory devices, and it also shows potential for neuromorphic computing applications.