Unlocking Antiferromagnets: A Revolutionary Approach to Computer Memory
Scientists at Nanyang Technological University, Singapore have made a breakthrough in reading data stored in antiferromagnetic materials, which could be used as an alternative to traditional silicon-based computer memory chips. By passing a current through the antiferromagnets at ultra-low temperatures, researchers were able to measure a unique voltage that indicated whether the material was coded as 1 or 0. This discovery provides a practical method for reading data stored in antiferromagnets, which are potentially more energy efficient and less susceptible to corruption than traditional magnetic materials. The research opens up possibilities for faster and more efficient computer memory in the future.
