Micron Unveils Next-Gen Memory Technologies for Faster Servers and Higher Capacities
Micron has unveiled its roadmap for upcoming memory innovations, including the introduction of HBM4E memory in 2028 with capacities of 48 to 64GB per stack and a bandwidth of 2TB/s. The roadmap also reveals plans for GDDR7 technology in late 2024, bringing a boost in bandwidth to 32 Gbps, and subsequent higher bandwidth of 36 Gbps in 2027 and 2028. Additionally, Micron plans to introduce MCRDIMM memory in 2025 with capacities ranging from 128 to 256GB and a transfer speed of 8800 MT/s.