Samsung Unveils 'Shinebolt': Revolutionary 36GB HBM3E Memory with Lightning-Fast 9.8 Gbps Speeds

Samsung has announced Shinebolt, its HBM3E memory, which offers higher capacities and greater memory bandwidth than its predecessor, HBM3. Shinebolt will have a maximum capacity of 36GB and a memory clockspeed of 9.8Gbps/pin, making it faster and more efficient than previous HBM memory. Samsung also provided an update on its GDDR7 memory, which will feature a switch to PAM3 encoding, allowing for improved memory transfer rates. GDDR7 is expected to have 50% lower standby power consumption than GDDR6. Both Shinebolt and GDDR7 are targeted at high-end processors, particularly in the AI market.